Resonant-cavity p-i-n photodetector utilizing an electron-beam evaporated Si/SiO2 microcavity

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Abstract
A new photodetector configuration consisting of an integrated Si/SiO2 microcavity on the light‐collecting surface of an InGaAs photodetector is proposed and demonstrated. The resulting resonant cavity p‐i‐n (RC‐PIN) detector exhibits a narrow spectral response of 14 nm width at a wavelength of 1350 nm, while reflecting all other wavelengths from 1100 to 1700 nm. The high degree of tailorability of spectral position, spectral detection width, and numerical aperature of efficient detection, as well as the ease of layer deposition make the RC‐PIN attractive for use in wavelength de‐multiplexing applications.