Charge pumping measurements on stepped-gate metal-nitride-oxide-silicon memory transistors
- 1 October 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (10) , 7106-7108
- https://doi.org/10.1063/1.330021
Abstract
Charge pumping measurements using a variable pulse base level and a constant voltage amplitude are shown to be best suited for the direct determination of surface state densities in the different regions of stepped gate metal-nitride-oxide-silicon memory transistors. The effect of hydrogen annealing on the reduction of the surface state densities in the different regions can be directly demonstrated by using this technique. Finally the technique is very helpful in the study of Write/Erase degradation in these memory devices.This publication has 5 references indexed in Scilit:
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- High-temperature hydrogen anneal of mnos structuresRevue de Physique Appliquée, 1978
- Charge-pumping investigations on MNOS structuresIEEE Transactions on Electron Devices, 1977
- The use of charge pumping currents to measure surface state densities in MOS transistorsSolid-State Electronics, 1976
- Charge pumping in MOS devicesIEEE Transactions on Electron Devices, 1969