High-temperature hydrogen anneal of mnos structures
- 1 January 1978
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 13 (12) , 825-828
- https://doi.org/10.1051/rphysap:019780013012082500
Abstract
The effects on fast surface state density due to high-temperature hydrogen anneals through windows in the silicon nitride layer next to the active MNOS regions are presented. A marked geometry effect is observed as a result of the occurring lateral hydrogen diffusion mechanism. Besides this lateral diffusion process, a vertical hydrogen diffusion through the nitride layer is observed at temperatures above 850 °CKeywords
This publication has 4 references indexed in Scilit:
- Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurementsSurface Science, 1971
- Low-Temperature Reduction of Fast Surface States Associated with Thermally Oxidized SiliconJournal of the Electrochemical Society, 1971
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970
- Characteristics of Fast Surface States Associated with SiO[sub 2]-Si and Si[sub 3]N[sub 4]-SiO[sub 2]-Si StructuresJournal of the Electrochemical Society, 1969