Low-temperature redistribution of As in Si during Ni silicide formation
- 15 November 1984
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (10) , 2725-2728
- https://doi.org/10.1063/1.333801
Abstract
We have investigated the redistribution of implanted As during Ni2Si formation at 275 and 300 °C and NiSi formation at 400 to 700 °C with neutron activation analysis and Hall effect measurement. Some of the implanted As atoms were found to redistribute themselves near the silicide‐Si interface during both Ni2Si and NiSi formation. The depth of the redistribution extends about 100 Å into Si and is affected slightly by the formation temperature of NiSi. A fraction of the redistributed As is electrically active and the fraction increases with the annealing temperature. The maximum electrical activity of redistributed As during NiSi formation at 700 °C is estimated to be 6.5%.This publication has 11 references indexed in Scilit:
- Low-temperature diffusion of dopant atoms in silicon during interfacial silicide formationPhysical Review B, 1984
- Redistribution of As during Pd2Si formation: Electrical measurementsJournal of Applied Physics, 1983
- Redistribution of As during Pd2Si formation: Ion channeling measurementsJournal of Applied Physics, 1982
- Redistribution of implanted phosphorus after platinum silicide formation and the characteristics of Schottky barrier diodesJournal of Applied Physics, 1982
- Low temperature doping of arsenic atoms in silicon during Pd2Si formationThin Solid Films, 1982
- Low-temperature redistribution of As in Si during Pd2Si formationApplied Physics Letters, 1981
- The redistribution of implanted dopants after metal-silicide formationJournal of Applied Physics, 1978
- On the formation of Ni and Pt silicide first phase: The dominant role of reaction kineticsApplied Physics Letters, 1978
- Influence of the nature of the Si substrate on nickel silicide formed from thin Ni filmsThin Solid Films, 1976
- Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of SiliconJournal of Applied Physics, 1964