Ultrafast x-ray measurement of laser heating in semiconductors: Parameters determining the melting threshold
- 27 April 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 63 (19) , 193306
- https://doi.org/10.1103/physrevb.63.193306
Abstract
The pulse-width dependence of thermal melting and ablation thresholds in germanium and gallium arsenide is correlated to direct, ultrafast x-ray measurements of laser-heated depths. The heating dynamics, determined by the interplay of nonlinear optical absorption, delayed Auger heating, and high-density carrier diffusion, explain the scaling laws of thermal melting thresholds in different semiconductors.Keywords
This publication has 27 references indexed in Scilit:
- Anharmonic Lattice Dynamics in Germanium Measured with Ultrafast X-Ray DiffractionPhysical Review Letters, 2000
- Study of Phonon Dispersion in Silicon and Germanium at Long Wavelengths Using Picosecond UltrasonicsPhysical Review Letters, 2000
- Generation of dense electron-hole plasmas in siliconPhysical Review B, 2000
- Thermal and nonthermal melting of gallium arsenide after femtosecond laser excitationPhysical Review B, 1998
- Femtosecond laser ablation of gallium arsenide investigated with time-of-flight mass spectroscopyApplied Physics Letters, 1998
- Ultrafast heating of silicon on sapphire by femtosecond optical pulsesPhysical Review Letters, 1986
- Ambipolar diffusion of high-density electrons and holes in Ge, Si, and GaAs: Many-body effectsPhysical Review B, 1982
- Simple technique for measurements of pulsed Gaussian-beam spot sizesOptics Letters, 1982
- Picosecond Optical Measurements of Band-to-Band Auger Recombination of High-Density Plasmas in GermaniumPhysical Review Letters, 1975
- Picosecond Ellipsometry of Transient Electron-Hole Plasmas in GermaniumPhysical Review Letters, 1974