Schottky-Barrier Properties of Nearly-Ideal (n ≃1) Al Contacts on MBE- and Heat Cleaned-GaAs Surfaces
- 1 February 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (2) , L107
- https://doi.org/10.1143/jjap.20.l107
Abstract
Aluminum films were deposited in ultra-high vacuum onto heat-cleaned-surfaces as well as oxygen-free MBE surfaces of (100) GaAs to form Schottky barriers with and without intervening oxide layers. The measured ideality factor n was close to unity (n≃1.02∼1.10) irrespective of the oxide thickness t ox, indicating the transport being dominated by thermionic emission processes. In contrast, the barrier height decreased systematically from 0.89 eV to 0.67 eV, as t ox is reduced, suggesting the presence of negatively charged centers (≃1012/cm2) at GaAs/oxide interfaces.Keywords
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