Generation mechanism of misfit dislocations in In1−xGaxAs1−yPy/InP DH structure grown by LPE
- 1 March 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 61 (2) , 362-368
- https://doi.org/10.1016/0022-0248(83)90373-1
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Misfit dislocations in InP/InGaAsP/InP double-heterostructure wafers grown by liquid phase epitaxyJournal of Applied Physics, 1982
- Misfit dislocation-free In1−xGaxAs1−yPy/InP heterostructure wafers grown by liquid phase epitaxyJournal of Applied Physics, 1981
- LPE Growth of Misfit Dislocation‐Free Thick In1 − x Ga x As Layers on InPJournal of the Electrochemical Society, 1980
- Lattice deformation and misorientation of InxGa1−xAs epitaxial layers grown on InP substrates by molecular-beam epitaxyJournal of Applied Physics, 1979
- Auger profile study of the influence of lattice mismatch on the LPE InGaAsP-InP heterojunction interfaceApplied Physics Letters, 1979
- The thermal-expansion parameters of some GaxIn1−xAsyP1−x alloysApplied Physics Letters, 1979
- Lattice deformations and misfit dislocations in GaInAsP/InP double-heterostructure layersApplied Physics Letters, 1978
- The interpretation of dislocation contrast in x-ray topographs of GaAs1−x PxJournal of Applied Physics, 1974
- Misfit Dislocations in Bicrystals of Epitaxially Grown Silicon on Boron-Doped Silicon SubstratesJournal of Applied Physics, 1969
- A New Method of X-Ray Diffraction Topography Using Monochromatic Divergent Beams Made by a Curved CrystalJapanese Journal of Applied Physics, 1968