Etching Characteristics by M= 0 Helicon Wave Plasma
- 1 July 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (7S)
- https://doi.org/10.1143/jjap.33.4433
Abstract
The each characteristics of SiO2and Al–Si–0.5%Cu were studied using theM=0 helicon wave plasma etching apparatus. A high concentration of F radicals was observed during SiO2etching using fluorocarbon gases. The etch rate of SiO2was strongly dependent on the concentration of F radicals in the plasma. A method of increasing the selectivity of SiO2to poly-Si was discussed. The Al–Si–0.5%Cu film deposited on the wafer of 200 mm diameter was anisotropically etched with high selectivity to photoresist using Cl2and BCl3gases. The etch rate uniformity across a wafer was also discussed.Keywords
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