Low thermal expansion polymide buried ridge waveguide AlGaAs/GaAs single-quantum-well laser diode
- 1 February 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (3) , 964-966
- https://doi.org/10.1063/1.340042
Abstract
A novel ridge waveguide laser diode has been developed in which the ridge is buried in a newly developed polyimide with a low thermal expansion coefficient close to that of AlGaAs which reduces the thermal stress to the junction and simplifies the wafer processing. A planar configuration, which is suitable for optoelectronic integration and an episide down mount for high-power operation, has been achieved by an etch-back process. Under cw operation, a low threshold current of 15 mA at 25 °C, a characteristic temperature T0 of 145 K, and maximum power output higher than 30 mW/facet have been obtained in a molecular-beam-epitaxial-grown graded-index separate confinement heterostructure single-quantum-well laser emitting at 780 nm.This publication has 3 references indexed in Scilit:
- Very low threshold current ridge-waveguide AlGaAs/GaAs single-quantum-well lasersElectronics Letters, 1985
- Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO2Japanese Journal of Applied Physics, 1984
- Extremely low threshold (AlGa)As graded-index waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1982