Temperature dependence of the energy gap of zinc-blende CdSe and Cd1−xZnxSe epitaxial layers
- 15 December 1996
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (12) , 6861-6863
- https://doi.org/10.1063/1.363753
Abstract
The temperature dependence of the energy gap of zinc‐blende CdSe and Cd1−xZnxSe has been determined over the entire range of composition from optical transmission and reflection measurements at temperatures between 5 and 300 K. The experimental results can be expressed by the following modified empirical Varshni formula, whose parameters are functions of the composition x: Eg(x,T)=Eg(x,0)−β(x)T2/[T+γ(x)]. Eg(x,0) exhibits a nonlinear dependence on composition, according to Eg=Eg(0,0)(1−x)+Eg(1,0)x−ax(1−x). The parameters β(x) and γ(x) can be expressed by β(x)=β(0)(1−x)+β(1)x+bx(1−x) and γ(x)=γ(0)(1−x)+γ(1)x.This publication has 11 references indexed in Scilit:
- Optical properties of cubic and hexagonal CdSeJournal of Applied Physics, 1995
- Optical properties of Zn1−xMgxSySe1−y epitaxial layers for blue-green laser applicationsJournal of Applied Physics, 1995
- Determination of the fundamental and split-off band gaps in zinc-blende CdSe by photomodulation spectroscopyPhysical Review B, 1994
- Dielectric function and critical points of cubic and hexagonal CdSePhysical Review B, 1994
- Optical properties of zinc-blende CdSe andSe films grown on GaAsPhysical Review B, 1994
- Blue-green laser diodesApplied Physics Letters, 1991
- Molecular beam epitaxy of Zn1−xCdxSe epilayers and ZnSe/Zn1−xCdxSe superlatticesApplied Physics Letters, 1990
- Exciton luminescence in ideal solid solutions (ZnxCd1−xSe system,0 < x < 1)Solid State Communications, 1989
- Growth of cubic (zinc blende) CdSe by molecular beam epitaxyApplied Physics Letters, 1989
- Determination of the thickness and optical constants of amorphous siliconJournal of Physics E: Scientific Instruments, 1983