Chemical and electrical properties of interfaces between deposited insulators and La2CuO4

15 February 1992

journal article
research article
Published by AIP Publishing in Journal of Applied Physics

Vol. 71 (4) , 1764-1767
https://doi.org/10.1063/1.351211

Abstract

Metal‐insulator‐semiconductor capacitors have been fabricated using plasma enhanced chemical vapor deposition of Si₃N₄ and SiO₂ insulators on La₂CuO₄ semiconducting single crystals. Auger electron spectroscopy was used to characterize the insulator‐semiconductor interface after annealing at several temperatures. Copper segregation and oxygen out‐diffusion were observed and the Si₃N₄‐semiconductor interface was found to be more stable than the SiO₂‐semiconductor one.

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