L-band internally matched Si-MMIC front-end
- 1 December 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 44 (12) , 2375-2378
- https://doi.org/10.1109/22.554564
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A high performance CBiCMOS with novel self-aligned vertical PNP transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A low-voltage silicon bipolar RF front-end for PCN receiver applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Monolithic planar RF inductor and waveguide structures on silicon with performance comparable to those in GaAs MMICPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Microwave inductors and capacitors in standard multilevel interconnect silicon technologyIEEE Transactions on Microwave Theory and Techniques, 1996
- Coplanar waveguides and microwave inductors on silicon substratesIEEE Transactions on Microwave Theory and Techniques, 1995
- A low cost and low power silicon npn bipolar process with NMOS transistors (ADRF) for RF and microwave applicationsIEEE Transactions on Electron Devices, 1995
- Design and performance of low-current GaAs MMICs for L-band front-end applicationsIEEE Transactions on Microwave Theory and Techniques, 1991