Radiation hardened metal-oxide-semiconductor devices with gate dielectrics grown by rapid thermal processing in O2 with diluted NF3
- 28 January 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (4) , 425-427
- https://doi.org/10.1063/1.104657
Abstract
Radiation‐hardened, fluorinated gate oxides have been obtained by rapid thermal processing of silicon in O2 with diluted NF3. Diluted NF3 is used as a source of fluorine and is introduced during the initial stage of rapid thermal processing. It is found that optimum amounts of fluorine incorporated at the Si/SiO2 interface improve resistance against x‐ray radiation; however, excessive amounts of fluorine degrade the radiation hardness.Keywords
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