Investigation of the influence of the film thickness in accumulation-mode fully-depleted SIMOX MOSFET's
- 30 September 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 19 (1-4) , 807-810
- https://doi.org/10.1016/0167-9317(92)90549-7
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- A latch phenomenon in buried N-body SOI NMOSFET'sIEEE Electron Device Letters, 1991
- Properties of ultra-thin wafer-bonded silicon-on-insulator MOSFET'sIEEE Transactions on Electron Devices, 1991