Improvement of hot-carrier resistance and radiation hardness of nMOSFETs by irradiation-then-anneal treatments

This publication has 11 references indexed in Scilit:

• Improvement of hot-electron-induced degradation in MOS capacitors by repeated irradiation-then-anneal treatments
  IEEE Electron Device Letters, 1990
• Improved hot-carrier resistance with fluorinated gate oxides
  IEEE Electron Device Letters, 1990
• Suppression of hot-carrier degradation in Si MOSFETs by germanium doping
  IEEE Electron Device Letters, 1990
• A radiation-hardened 10 K-gate CMOS gate array
  IEEE Transactions on Nuclear Science, 1989
• Improvement in radiation hardness of oxide by successive irradiation-then-anneal treatments
  Solid-State Electronics, 1989
• Hot-electron hardened Si-gate MOSFET utilizing F implantation
  IEEE Electron Device Letters, 1989
• The effect of channel hot-carrier stressing on gate-oxide integrity in MOSFETs
  IEEE Transactions on Electron Devices, 1988
• Devlopement of a Radiation Hard N-Channel Power MOSFET
  IEEE Transactions on Nuclear Science, 1983
• Radiation-Induced Defects in SiO2 as Determined with XPS
  IEEE Transactions on Nuclear Science, 1982
• Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor
  IEEE Transactions on Electron Devices, 1980