Internal Stress in V3Si Thin Films Prepared by Magnetron Sputtering

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Abstract
The internal stress in V3Si film prepared by magnetron sputtering on thermally-oxidized Si substrates was measured as a function of the substrate temperature T s by the optical interference method. The intrinsic stress in the film has a maximum value at the value of T s at which the crystalline film starts to be deposited. It then decreases with increase in T s. The thermal stress also changes markedly at almost the same value of T s, and increases with T s. The value of the intrinsic stress in a well-ordered film deposited at T s=570°C is approximately 1×109 dyn/cm2 (tension). The thermal expansion coefficients and Young's moduli for films deposited at various values of T s have been derived from these data. The effect of stress on the film lattice constants is discussed.