A Highly Accurate Stress Measurement System for Producing Precise X-Ray Masks
- 1 December 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (12S) , 6729-6733
- https://doi.org/10.1143/jjap.34.6729
Abstract
A new system that measures stress in film deposited on Si wafers has been developed to produce highly accurate X-ray masks. The system consists of very rigid air sliders, an electrostatic sensor, and a soft-handling wafer chuck. With the system, wafer warp is precisely measured before and after film deposition, and the stress distribution is calculated from those measurements. Wafer warps can be measured with a repeatability of a few nanometers by this system. The stress distribution of absorber film on 2-mm-thick Si wafers can be determined with an accuracy of ±5 MPa. The stress distribution agrees well with the pattern position shifts in the membrane.Keywords
This publication has 10 references indexed in Scilit:
- Soft-handed vacuum chuckPublished by SPIE-Intl Soc Optical Eng ,1994
- In-Situ Stress Control During Sputter DepositionMRS Proceedings, 1993
- Properties Of SiC Film As X-Ray Mask MembraneMRS Proceedings, 1993
- Simulation of X-Ray Mask DistortionJapanese Journal of Applied Physics, 1992
- An X-ray mask using SiC membrane deposited by ECR plasma CVDMicroelectronic Engineering, 1990
- Dynamical method for the thermomechanical study of thin membranesJournal of Vacuum Science & Technology B, 1989
- A vertical stepper for synchrotron x-ray lithographyJournal of Vacuum Science & Technology B, 1989
- Use of ion implantation to eliminate stress-induced distortion in x-ray masksJournal of Vacuum Science & Technology B, 1988
- A technique for the determination of stress in thin filmsJournal of Vacuum Science & Technology B, 1983
- Thermal stresses and cracking resistance of dielectric films (SiN, Si3N4, and SiO2) on Si substratesJournal of Applied Physics, 1978