Doping of nitrogen in ZnSe films: improved doping properties in ZnSe/ZnSSe periodic layered structures grown on GaAs by MOVPE
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 679-682
- https://doi.org/10.1016/0022-0248(91)90541-c
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 6 references indexed in Scilit:
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- Doping in a superlattice structure: Improved hole activation in wide-gap II-VI materialsJournal of Applied Physics, 1990
- Characterization of Nitrogen-Doped ZnSe and ZnS0.06Se0.94 Films Grown by Metal-Organic Vapor-Phase EpitaxyJapanese Journal of Applied Physics, 1988
- Optical characterization and band offsets in ZnSe- strained-layer superlatticesPhysical Review B, 1988
- Nitrogen Doped p-Type ZnSe Layer Grown by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1988
- Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion dopingApplied Physics Letters, 1986