Properties of Germanium-Doped Indium Oxide Thin Films Prepared by DC Magnetron Sputtering

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Abstract
Ge-doped indium oxide (In2O3) thin films were prepared by dc magnetron sputtering. The electrical resistivity, 1.6×10-4 Ω·cm, of the film deposited at 200°C was obtained at 5.5% Ge doping. This was comparable with that of ITO (tin-doped In2O3) films. Furthermore, amorphous films with Ge content higher than 5.0% were obtained when the substrate temperature was 20°C, while they were obtained with Ge content higher than 7.0% when the substrate temperature was 200°C. The electrical resistivity of 6.0% Ge-doped amorphous In2O3 film deposited at 20°C is 4.1×10-4 Ω·cm. The etching rate of the film by 5% HCl is 1400 Å/min and is nine times as high as that of ITO films.