Patterning Characteristics of ITO Thin Films

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Abstract
The relationship between patterning characteristics and other (such as microstructural and electroptical) characteristics which depend on sputtering conditions, especially the substrate temperature and oxygen partial pressure, was investigated in ITO films prepared by the rf magnetron sputtering method. Sputtering conditions that satisfied both the patterning and electroptical characteristics were found to exist and ought to be precisely controlled since the postannealing of ITO films does not necessarily improve the patterning characteristics. The films showing superior patterning characteristics had dense microstructures without pores and simultaneously exhibited fairly low etching rates and low resistivities.