Intrinsic performance limits in transparent conducting oxides
- 1 January 1992
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science Letters
- Vol. 11 (5) , 263-265
- https://doi.org/10.1007/bf00729407
Abstract
No abstract availableKeywords
This publication has 37 references indexed in Scilit:
- Electrical and optical properties of amorphous indium oxideJournal of Physics: Condensed Matter, 1990
- Evaporated Sn-doped In2O3 films: Basic optical properties and applications to energy-efficient windowsJournal of Applied Physics, 1986
- Ion-beam sputtered indium tin oxide for InP solar cellsJournal of Vacuum Science & Technology A, 1986
- The influence of target oxidation and growth-related effects on the electrical properties of reactively sputtered films of tin-doped indium oxideThin Solid Films, 1981
- Preparation of conducting and transparent thin films of tin-doped indium oxide by magnetron sputteringApplied Physics Letters, 1980
- The Static Dielectric Constant of SnO2Journal of Applied Physics, 1968
- Quantum-Transport Theories and Multiple Scattering in Doped Semiconductors. II. Mobility of-type Gallium ArsenidePhysical Review B, 1967
- Infrared reflectivity of zinc oxideJournal of Physics and Chemistry of Solids, 1959
- XCIV. Scattering of electrons and holes by charged donors and acceptors in semiconductorsJournal of Computers in Education, 1955
- Theory of the Electrical Properties of Germanium and SiliconPublished by Elsevier ,1955