Transmission electron microscopy of synthetic diamond
- 1 July 1966
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 14 (127) , 79-86
- https://doi.org/10.1080/14786436608218990
Abstract
Synthetic diamond single crystals have been examined by transmission electron microscopy. Imperfections such as stacking faults and dislocations have been observed. It is suggested that these faults were formed as a result of growth processes around metallic inclusions.This publication has 6 references indexed in Scilit:
- An X-ray topographic study of planar growth defects in a natural diamondPhilosophical Magazine, 1965
- Fringe Patterns at Anti‐Phase Boundaries with α = π Observed in the Electron MicroscopePhysica Status Solidi (b), 1964
- Electron Microscope Transmission Images of Coherent Domain Boundaries I. Dynamical TheoryPhysica Status Solidi (b), 1964
- Structure and Origin of Stacking Faults in Epitaxial SiliconJournal of Applied Physics, 1963
- Imperfections in type I and type II diamondsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1962
- Synthetic diamonds: growth and etch phenomenaProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1962