Negative Ions in 13.56 MHz Discharge of SF6Gas in a Planar Diode
- 1 July 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (7A) , L852
- https://doi.org/10.1143/jjap.34.l852
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Diagnostics of SF6 13.56MHz Discharge Using the Electrode System with Silicon Wafer.SHINKU, 1995
- Mass Spectrometry of Discharge Products at 13.56 MHz in SF6GasJapanese Journal of Applied Physics, 1994
- Simulations of rf glow discharges inby the relaxation continuum model: Physical structure and function of the narrow-gap reactive-ion etcherPhysical Review E, 1994
- The Radical Transport in the Narrow-Gap-Reactive-Ion Etcher in SF6by the Relaxation Continuum ModelJapanese Journal of Applied Physics, 1994
- Mass Spectrometric Observation of Decomposition Products SFx (x=1, 2) in SF6 Discharge at 13.56 MHzJapanese Journal of Applied Physics, 1993
- A mass spectrometric study of positive and negative ion formation in an SF6corona. II. Influence of water and SF6neutral by-productsJournal of Physics D: Applied Physics, 1992
- A mass spectrometric study of positive and negative ion formation in an SF6corona. I. Sources of sulphur-fluoride ionsJournal of Physics D: Applied Physics, 1992
- A model for the etching of silicon in SF6/O2 plasmasPlasma Chemistry and Plasma Processing, 1990
- Mass spectrometric transient study of dc plasma etching of Si in SF6/O2 mixturesJournal of Applied Physics, 1986
- Plasma diagnostics of a SF6radiofrequency discharge used for the etching of siliconJournal of Physics D: Applied Physics, 1986