Current-voltage model of short-channel MOSFETs operated in the linear region
- 1 June 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (6) , 1239-1245
- https://doi.org/10.1016/0038-1101(94)00218-5
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- A new approach to determine the drain-and-source series resistance of LDD MOSFET'sIEEE Transactions on Electron Devices, 1993
- Threshold voltage model for deep-submicrometer MOSFETsIEEE Transactions on Electron Devices, 1993
- A new simplified two-dimensional model for the threshold voltage of MOSFET's with nonuniformly doped substrateIEEE Transactions on Electron Devices, 1991
- Methodology for submicron device model developmentIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
- Gate-voltage-dependent effective channel length and series resistance of LDD MOSFET'sIEEE Transactions on Electron Devices, 1987
- The stability and tunability of a CARM amplifierIEEE Transactions on Electron Devices, 1987
- Threshold voltage of small-geometry Si MOSFETsSolid-State Electronics, 1986
- An analytic threshold-voltage model for short-channel enhancement mode n-channel MOSFETs with double boron channel implantationSolid-State Electronics, 1986
- Threshold voltage models of short, narrow and small geometry MOSFET's: A reviewSolid-State Electronics, 1982
- A simple two-dimensional model for IGFET operation in the saturation regionIEEE Transactions on Electron Devices, 1977