An analytic threshold-voltage model for short-channel enhancement mode n-channel MOSFETs with double boron channel implantation

This publication has 7 references indexed in Scilit:

• An analytic and accurate model for the threshold voltage of short channel MOSFETs in VLSI
  Solid-State Electronics, 1984
• A new method to determine MOSFET channel length
  IEEE Electron Device Letters, 1980
• An improved definition for the onset of heavy inversion in an MOS structure with nonuniformly doped semiconductors
  IEEE Transactions on Electron Devices, 1980
• MOS modelling by analytical approximations. I. Subthreshold current and threshold voltage
  International Journal of Electronics, 1979
• Double boron implant short-channel MOSFET
  IEEE Transactions on Electron Devices, 1977
• Onset of heavy inversion in MOS devices doped nonuniformly near the surface
  IEEE Transactions on Electron Devices, 1977
• Threshold Voltage Characteristics of Double-boron-implanted Enhancement-mode MOSFETs
  IBM Journal of Research and Development, 1975