MOS modelling by analytical approximations. I. Subthreshold current and threshold voltage

1 January 1979

journal article
research article
Published by Taylor & Francis in International Journal of Electronics

Vol. 46 (1) , 33-55
https://doi.org/10.1080/00207217908900964

Abstract

Analytical modelling of subthreshold current and threshold voltage of MOS transistors 19 tested by comparison with experimental results and two-dimensional numerical calculations. For short channel devices the subthreshould current calculated according to Taylor (1978) and to the four-parameter fitting model of Poon (1973) is found to agree well with experiment. The short channel decrease of threshold voltage is also well described by Taylor. A new formula is suggested in this paper which improves the agreement with measured results. The threshold voltage of ion-implanted short-channel devices is well described by the model of Wang (1977) if the increase of the straggle duo to annealing is correctly accounted for.

Keywords

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