A 630-mS/mm GaAs MESFET with Au/WSiN refractory metal gate
- 1 August 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (8) , 417-418
- https://doi.org/10.1109/55.763
Abstract
GaAs MESFET's with a gate length as low as 0.2 mu m have been successfully fabricated with Au/WSiN refractory metal gate n/sup +/-self-aligned ion-implantation technology. A very thin channel layer with high carrier concentration was realized with 10-keV ion implantation of Si and rapid thermal annealing. Low-energy implantation of the n/sup +/-contact regions was examined to reduce substrate leakage current. The 0.2- mu m gate-length devices exhibited a maximum transconductance of 630 mS/mm and an intrinsic transconductance of 920 mS/mm at a threshold voltage of -0.14 V.Keywords
This publication has 4 references indexed in Scilit:
- Reactively sputtered WSiN film suppresses As and Ga outdiffusionJournal of Vacuum Science & Technology B, 1988
- Characterization of a thin Si-implanted and rapid thermal annealed n-GaAs layerApplied Physics Letters, 1987
- Characterization of reactively sputtered WNx film as a gate metal for self-alignment GaAs metal–semiconductor field effect transistorsJournal of Vacuum Science & Technology B, 1986
- Buried p-layer SAINT for very high-speed GaAs LSI's with submicrometer gate lengthIEEE Transactions on Electron Devices, 1985