Characteristics of GaSb growth using various gallium and antimony precursors
- 1 January 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 170 (1-4) , 55-60
- https://doi.org/10.1016/s0022-0248(96)00580-5
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Growth of high-quality GaSb by metalorganic vapor phase epitaxyJournal of Electronic Materials, 1995
- Growth of GaSb using trisdimethylaminoantimonyJournal of Crystal Growth, 1995
- Optical and electrical characterization of thick GaSb buffer layers grown on 2 in GaAs wafersMaterials Science and Engineering: B, 1994
- Trisdimethylaminoantimony: a new Sb source for low temperature epitaxial growth of InSbJournal of Crystal Growth, 1994
- Tertiaybutyldimethylantimony for GaSb growthJournal of Electronic Materials, 1993
- The use of triisopropylantimony for the growth of InSb and GaSbJournal of Applied Physics, 1991
- Photoluminescence of GaSb grown by metal-organic vapour phase epitaxySemiconductor Science and Technology, 1991
- Effects of trimethylantimonide/triethylgallium ratios on epilayer properties of gallium antimonide grown by low-pressure metalorganic chemical vapor depositionJournal of Applied Physics, 1990
- Growth and characterization of undoped and N-type (Te) doped MOVPE grown gallium antimonideJournal of Electronic Materials, 1990
- Growth of GaSb by MOVPESemiconductor Science and Technology, 1988