Growth of GaSb using trisdimethylaminoantimony
- 1 May 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 151 (1-2) , 1-8
- https://doi.org/10.1016/0022-0248(94)01024-2
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Growth and characterization of undoped and N-type (Te) doped MOVPE grown gallium antimonideJournal of Electronic Materials, 1990
- Growth of GaSb by MOVPESemiconductor Science and Technology, 1988
- Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1−xSbxApplied Physics Letters, 1988
- Liquid-phase-epitaxial growth of Ga0.96Al0.04Sb: Electrical and photoelectrical characterizationsJournal of Applied Physics, 1986
- A photoluminescence and Hall-effect study of GaSb grown by molecular-beam epitaxyJournal of Applied Physics, 1986
- OMVPE growth of the metastable III/V alloy GaAs0.5Sb0.5Journal of Electronic Materials, 1986
- Is the intrinsic conductivity of AlGaSb grown at low temperatures n or p type?Applied Physics Letters, 1984
- The organometallic vpe growth of GaSb and GaAsl−xSbx using trimethylantimonyJournal of Electronic Materials, 1982
- The Use of Metalorganics in the Preparation of Semiconductor Materials: VII . Gallium AntimonideJournal of the Electrochemical Society, 1979
- Undopedn-Type GaSb Grown by Liquid Phase EpitaxyJapanese Journal of Applied Physics, 1974