Mechanism of degradation of LDD MOSFETs due to hot-electron stress
- 1 July 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (7) , 1156-1158
- https://doi.org/10.1109/16.3382
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Comparison of drain structures in n-channel MOSFET'sIEEE Transactions on Electron Devices, 1986
- Structure-enhanced MOSFET degradation due to hot-electron injectionIEEE Electron Device Letters, 1984
- An improved method to determine MOSFET channel lengthIEEE Electron Device Letters, 1982
- Fabrication of high-performance LDDFET's with Oxide sidewall-spacer technologyIEEE Transactions on Electron Devices, 1982
- Experimental derivation of the source and drain resistance of MOS transistorsIEEE Transactions on Electron Devices, 1980
- A new method to determine MOSFET channel lengthIEEE Electron Device Letters, 1980