External-beam switching in monolithic bistable GaAs quantum well étalons
- 29 October 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (18) , 1849-1851
- https://doi.org/10.1063/1.104036
Abstract
Monolithic bistable étalons with a GaAs/Al0.3Ga0.7As multiple quantum well active layer and AlAs/Al0.1Ga0.9As Bragg reflectors have been fabricated by metalorganic vapor phase epitaxy. They exhibit a very good memory effect. Experiments with an additional external beam at the same and at a different wavelength have been performed. They demonstrated thresholding, pulse shaping, amplification, and wavelength conversion. Moreover, the use of a diode laser external beam showed the possibility of controlling an intense beam with a weaker beam. We describe an experimental configuration in the reflection mode and at normal incidence, which allows mixing the two input beams and extracting the output beam with an ideal 100% efficiency.Keywords
This publication has 8 references indexed in Scilit:
- High contrast multiple quantum well optical bistable device with integrated Bragg reflectorsApplied Physics Letters, 1990
- Optical Nonlinearities of GaAs‐Based Epitaxial Structures for All‐Optical SwitchingPhysica Status Solidi (b), 1990
- Monolithic GaAs/AlAs optical bistable étalons with improved switching characteristicsApplied Physics Letters, 1988
- Bistable switching in nonlinear Al0.06Ga0.94As étalonsApplied Physics Letters, 1988
- Self-biasing effects on plasma etching characteristics of Si and SiO2Applied Physics Letters, 1988
- Quantum Wells For Optical Information ProcessingOptical Engineering, 1987
- Single crystal, epitaxial multilayers of AlAs, GaAs, and AlxGa1−xAs for use as optical interferometric elementsApplied Physics Letters, 1986
- External off and on switching of a bistable optical deviceApplied Physics Letters, 1982