Single crystal, epitaxial multilayers of AlAs, GaAs, and AlxGa1−xAs for use as optical interferometric elements
- 1 September 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (9) , 489-491
- https://doi.org/10.1063/1.97126
Abstract
We propose using single crystal multilayers of AlAs, GaAs, and AlxGa1−xAs for use as several different kinds of optical interference elements which include high reflectors, transmission filters, and Fabry–Perot cavities. We have grown many of these structures by molecular beam epitaxy and measured their optical characteristics. We find the characteristics of these structures to be very useful for a number of applications for integrated optical devices which we also propose.Keywords
This publication has 9 references indexed in Scilit:
- Single-crystal, optical interference filters and integrated high reflector/photodiode using multilayers of GaP and GaAsxP1−xApplied Physics Letters, 1986
- Single crystal semiconductor multilayers for electrically active optical interference filtersSuperlattices and Microstructures, 1985
- High reflectivity GaAs-AlGaAs mirrors fabricated by metalorganic chemical vapor depositionApplied Physics Letters, 1984
- Index of refraction of AlAs-GaAs superlatticesJournal of Applied Physics, 1983
- Electroabsorption by Stark effect on room-temperature excitons in GaAs/GaAlAs multiple quantum well structuresApplied Physics Letters, 1983
- A simple model for the index of refraction of GaAs–AlAs superlattices and heterostructure layers: Contributions of the states around ΓJournal of Vacuum Science & Technology B, 1983
- Room-temperature excitonic optical bistability in a GaAs-GaAlAs superlattice étalonApplied Physics Letters, 1982
- X-ray diffraction study of interdiffusion and growth in (GaAs)n(AlAs)m multilayersJournal of Applied Physics, 1980
- Interference filters: single crystal multilayer AlAs–GaAsApplied Optics, 1976