High reflectivity GaAs-AlGaAs mirrors fabricated by metalorganic chemical vapor deposition

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Abstract
We demonstrate the ability to grow optically reflective structures epitaxially on a GaAs substrate using the metalorganic chemical vapor deposition growth technique. This has been accomplished by depositing alternating quarter-wavelength layers of GaAs and (AlGa)As. By growing such structures with up to 80 total layers, we have produced near perfect (100% reflectivity) mirrors that are design wavelength selectable over a wide range. A theoretical calculation is presented which demonstrates the ability of these films to be grown with a wide range of reflectivities over a wide range of material compositions.