Pressure dependence of the E1 gap in GaSb: Resonant Raman technique
- 1 April 1984
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 50 (4) , 287-289
- https://doi.org/10.1016/0038-1098(84)90370-3
Abstract
No abstract availableKeywords
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