Nitrogen-Doped ZnSe and ZnSSe Grown by Molecular Beam Epitaxy
- 1 February 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (2A) , L221-224
- https://doi.org/10.1143/jjap.29.l221
Abstract
Nitrogen-doped ZnSe and lattice-matched ZnSSe were grown on GaAs substrates by MBE using NH3 gas as a dopant source. The epilayers were characterized by photoluminescence. ZnSe was rather easily doped, and samples in which the acceptor-bound exciton line was a major line in the exciton emission region at 11 K were obtained. ZnSSe was less readily doped with nitrogen at the same NH3 effective pressure. However, the free-to-acceptor omission at 60 K was stronger in ZnSSe than in ZnSe, due to the effect of lattice matching.Keywords
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