AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) prepared by molecular beam epitaxy
- 31 July 1991
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 34 (7) , 717-722
- https://doi.org/10.1016/0038-1101(91)90007-l
Abstract
No abstract availableKeywords
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