Diffused epitaxial GaAlAs-GaAs heterojunction bipolar transistor for high-frequency operation
- 1 May 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (9) , 816-818
- https://doi.org/10.1063/1.93271
Abstract
A GaAlAs-GaAs heterojunction bipolar transistor (HBT) has been realized by liquid phase epitaxy with a very low emitter doping. A diffused epitaxial structure has been developed. Transition frequencies close to 5 GHz for IC = 10 mA have been measured, and high transition frequency has been obtained at low current ( fT = 1.3 GHz for IC = 1 mA) in spite of a rather large emitter base area (SEB∼4.10−5 cm2). These figures are the best reported so far for HBT’s and are very promising for low-power high-speed logic.Keywords
This publication has 9 references indexed in Scilit:
- GaAlAs/GaAs heterojunction microwave bipolar transistorElectronics Letters, 1981
- A monolithic integration of GaAs/GaAlAs bipolar transistor and heterostructure laserApplied Physics Letters, 1980
- Design and fabrication of high-speed GaAlAs/GaAs heterojunction transistorsIEEE Transactions on Electron Devices, 1980
- Design and evaluation of a planar GaAlAs-GaAs bipolar transistorElectronics Letters, 1980
- Al0.5Ga0.5As-GaAs heterojunction phototransistors grown by metalorganic chemical vapor depositionApplied Physics Letters, 1979
- (GaAl)As/GaAs heterojunction phototransistors with high current gainJournal of Applied Physics, 1977
- GaAsGaAlAs heterojunction transistor for high frequency operationSolid-State Electronics, 1972
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- Theory of a Wide-Gap Emitter for TransistorsProceedings of the IRE, 1957