A New Degradation Mechanism in High-Voltage SiC Power MOSFETs
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- 25 June 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 28 (7) , 587-589
- https://doi.org/10.1109/led.2007.897861
Abstract
The phenomenon of recombination-induced stacking faults in high-voltage p-n diodes in SiC has been previously shown to increase the forward voltage drop due to reduction of minority carrier lifetime. In this paper, it has been shown that, for the first time, this effect is equally important in unipolar devices such as high-voltage MOSFETs. If the internal body diode is allowed to be forward biased during the operation of these devices, then the recombination-induced SFs will reduce the majority carrier conduction current and increase the leakage current in blocking mode. The effect is more noticeable in high-voltage devices where the drift layer is thick and is not expected to impact 600-1200-V devices.Keywords
This publication has 7 references indexed in Scilit:
- A Case for High Temperature, High Voltage SiC Bipolar DevicesPublished by Test accounts ,2007
- A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC ApplicationsMaterials Science Forum, 2006
- Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power DevicesPublished by Test accounts ,2006
- Degradation of hexagonal silicon-carbide-based bipolar devicesJournal of Applied Physics, 2006
- Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward biasApplied Physics Letters, 2002
- Structure of recombination-induced stacking faults in high-voltage SiC p–n junctionsApplied Physics Letters, 2002
- Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC DiodesMaterials Science Forum, 2001