Metalorganic vapor-phase epitaxy of cubic AlxGa1−xN alloy on a GaAs (100) substrate
- 19 May 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (20) , 2720-2722
- https://doi.org/10.1063/1.119003
Abstract
Cubic AlxGa1−xN was grown on a GaAs (100) substrate by using low-pressure metalorganic vapor-phase epitaxy with a GaN buffer layer grown at low and high temperatures. The high-growth–temperature GaN layer improved the quality of the cubic AlxGa1−xN. Also, the AlN molar fraction could be controlled by changing the carrier gas flow of trimethylaluminum. The AlxGa1−xN epitaxial layers in the range of 0⩽x⩽0.23 exhibited strong near-band-edge photoluminescence at room temperature. Their photoluminescence peak energies show a linear dependence on the molar fraction.Keywords
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