Influence of the 90° partial dislocation core structure in silicon on energy levels
- 1 July 1994
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 91 (4) , 301-305
- https://doi.org/10.1016/0038-1098(94)90306-9
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Energy level calculations of the reconstructed 90° partial dislocation in siliconSolid State Communications, 1992
- The 90° partial dislocation in silicon: Geometry and electronic structurePhilosophical Magazine A, 1989
- LCAO Recursion Approach for the Bound Electron States at the 90°‐Partial Dislocation in SiliconPhysica Status Solidi (b), 1989
- Molecular-cluster studies of defects in silicon lattices. III. Dangling-bond reconstruction at the core of a 90°partial dislocation in siliconPhysical Review B, 1988
- Local-environment approach for deep-level defects in semiconductors: Application to the vacancy in siliconPhysical Review B, 1988
- Line defects in silicon: The 90° partial dislocationPhysical Review B, 1984
- Core structure and electronic bands of the 90° partial dislocation in siliconPhilosophical Magazine Part B, 1984
- 30° Partial Dislocations in Silicon: Absence of Electrically Active StatesPhysical Review Letters, 1982
- On the Core Structure of the Glide‐Set 90° and 30° Partial Dislocations in SiliconPhysica Status Solidi (b), 1980
- Electron states associated with partial dislocations in siliconPhysica Status Solidi (b), 1979