Analytical Charge and Capacitance Models of Undoped Cylindrical Surrounding-Gate MOSFETs
- 26 December 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 54 (1) , 162-165
- https://doi.org/10.1109/ted.2006.887213
Abstract
We present an analytical and continuous charge model for cylindrical undoped surrounding-gate MOSFETs, from which analytical expressions of all total capacitances are obtained. The model is based on a unified charge control model derived from Poisson equation. The drain current, charge, and capacitances are written as continuous explicit functions of the applied voltages. The calculated capacitance characteristics show excellent agreement with three-dimensional numerical device simulationsKeywords
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