Ohmic conduction of sub-10nm P-doped silicon nanowires at cryogenic temperatures
- 4 February 2008
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 92 (5) , 052101
- https://doi.org/10.1063/1.2840182
Abstract
We investigate the conduction properties of an embedded, highly phosphorus-doped nanowire with a width of 8 nm lithographically defined by scanning tunneling microscope based patterning of a hydrogen-terminated Si(100):H surface. Four terminal I - V measurements show that ohmic conduction is maintained within the investigated temperature range from 35 K down to 1.3 K . A prominent resistance increase is observed below ∼ 4 K which is attributed to a crossover into the strong localization regime. The low temperature conductance follows a one-dimensional variable range hopping model accompanied by positive magnetoresistance which dominates over weak localization effects at low temperature.Keywords
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