Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain
- 4 June 2007
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 90 (23)
- https://doi.org/10.1063/1.2746946
Abstract
The authors report the fabrication of a p-field effect transistor (FET) and an n-FET with a silicon nanowire channel and doped silicon source and drain regions. The silicon nanowires were synthesized by the vapor-liquid-solid method. For p-FETs the source and drain regions were formed by adding boron doped silicon to the unintentionally doped nanowire body at predefined locations using in situ doped silicon epitaxy. For n-FETs the epitaxial source and drain regions were grown undoped and were later implanted with P and As. The measured Id-Vg characteristics of the devices exhibited unipolar transport, while reference FETs made with nanowires from the same batch but with Schottky (metal) contacts exhibited ambipolar characteristics.Keywords
This publication has 11 references indexed in Scilit:
- Fully Depleted Nanowire Field‐Effect Transistor in Inversion ModeSmall, 2007
- Silicon-Nanowire Transistors with Intruded Nickel-Silicide ContactsNano Letters, 2006
- Realization of a Linear Germanium Nanowire p−n JunctionNano Letters, 2006
- Observation of Incubation Times in the Nucleation of Silicon Nanowires Obtained by the Vapor–Liquid–Solid MethodJapanese Journal of Applied Physics, 2006
- Morphology of germanium nanowires grown in presence of B2H6Applied Physics Letters, 2006
- Encoding Electronic Properties by Synthesis of Axial Modulation-Doped Silicon NanowiresScience, 2005
- Effect of diborane on the microstructure of boron-doped silicon nanowiresJournal of Crystal Growth, 2005
- Analysis of quantum ballistic electron transport in ultrasmall silicon devices including space-charge and geometric effectsJournal of Applied Physics, 2004
- Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETsIEEE Transactions on Electron Devices, 2003
- Thin Single Crystal Silicon on Oxide by Lateral Solid Phase Epitaxy of Amorphous Silicon and Silicon GermaniumMRS Proceedings, 2000