Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopy
- 1 July 1996
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 100-101, 449-453
- https://doi.org/10.1016/0169-4332(96)00318-2
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
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- Kinetics of the adsorption of O2 and of the desorption of SiO on Si(100): A molecular beam, XPS, and ISS studySurface Science, 1987
- Initial stage of thermal oxidation of the Si(111)-(7×7) surfacePhysical Review B, 1986