Rapid direct fabrication of active electro-optic modulators in GaAs
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 12 (9) , 1588-1596
- https://doi.org/10.1109/50.320941
Abstract
No abstract availableKeywords
This publication has 43 references indexed in Scilit:
- 40 GHz, low half-wave voltage Ti:LiNbO 3 intensity modulatorElectronics Letters, 1992
- The electro-optic coefficients of GaAs: Measurements at 1.32 and 1.52 μm and study of their dispersion between 0.9 and 10 μmJournal of Applied Physics, 1992
- Optical carrier modulation by integrated optical devices in lithium niobatePublished by SPIE-Intl Soc Optical Eng ,1991
- 20 GHz electro-optic polymer Mach–Zehnder modulatorApplied Physics Letters, 1991
- High-speed III-V semiconductor intensity modulatorsIEEE Journal of Quantum Electronics, 1991
- Phase modulation in GaAs/AlGaAs double heterostructures. I. TheoryJournal of Applied Physics, 1990
- High-speed low-voltage modulation with a nonsymmetric Mach-Zehnder interferometerJournal of Lightwave Technology, 1989
- Mach-Zehnder modulators and optical switches on III-V semiconductorsJournal of Lightwave Technology, 1988
- Waveguide Electrooptic ModulatorsIEEE Transactions on Microwave Theory and Techniques, 1982
- Electro-Optical Effect of ZincblendeJournal of the Optical Society of America, 1961