Studies on the Low Local Temperature Rise in the Mirror Facet of a High-Power InGaAsP/GaAs Laser
- 1 December 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (12A) , L1686
- https://doi.org/10.1143/jjap.31.l1686
Abstract
To examine the facet heating behavior, high-power InGaAsP/GaAs laser diodes were fabricated with the epitaxial layers by liquid phase epitaxy (LPE) growth onto the moving substrate. It is shown that the facet temperature rise of the InGaAsP/GaAs laser diode has been kept lower than 30°C even above 500 mW. The kinematic model in which the presence of phosphorus oxide with a high heat of formation preserves the relatively low surface recombination rate at the mirror facet of the InGaAs/GaAs laser is proposed.Keywords
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