Optical study of isotopic effects in the sulfur deep level in silicon
- 1 November 1980
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (9) , 776-778
- https://doi.org/10.1063/1.92085
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- The effect of non-exponential transients on the determination of deep-trap activation energies by deep-level transient spectroscopyJournal of Physics C: Solid State Physics, 1979
- The energy levels and the defect signature of sulfur-implanted silicon by thermally stimulated measurementsSolid-State Electronics, 1978
- Hole traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Photoionization of Electrons at Sulfur Centers in SiliconJournal of Applied Physics, 1971
- Thermal emission and capture of electrons at sulfur centers in siliconSolid-State Electronics, 1971
- Even-Parity Levels of Donors in SiPhysical Review Letters, 1970
- Influence of Hydrostatic Pressure and Temperature on the Deep Donor Levels of Sulfur in SiliconPhysical Review B, 1970
- Paramagnetic Resonance Study of a Deep Donor in SiliconPhysical Review B, 1965
- Infrared Absorption Spectrum of Sulfur-Doped SiliconPhysical Review Letters, 1962
- On Pre-Breakdown Phenomena in Insulators and Electronic Semi-ConductorsPhysical Review B, 1938