Thermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells
- 15 February 2002
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 91 (4) , 2391-2397
- https://doi.org/10.1063/1.1433936
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
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