Fabrication and characterization of the pentacene thin film transistor with a Gd2O3 gate insulator
- 21 September 2004
- journal article
- Published by Elsevier in Synthetic Metals
- Vol. 146 (3) , 351-354
- https://doi.org/10.1016/j.synthmet.2004.08.021
Abstract
No abstract availableKeywords
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