Electronic properties ofsingle crystals at low temperatures
- 15 September 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 54 (11) , 7799-7806
- https://doi.org/10.1103/physrevb.54.7799
Abstract
We report measurements of Hall effect, transverse magnetoresistance, and specific heat on high-quality (C54 phase) single crystals at low temperatures. We used crystals with low residual resistivity (typically =0.15 μΩ cm) and magnetic fields (B) up to 20 T. These facts allowed us to study the electronic properties from the low (τ≪1) to the high field regime (τ≳1, =eB/m* being the cyclotron frequency and τ the electron relaxation time) as a function of magnetic-field strength and temperature. The low field Hall coefficient is negative, almost constant =-(0.5±0.1)× /C between 100 and 300 K and it changes sign at ∼30 K. The angular dependence of magnetoresistance shows either minima or maxima when the magnetic field is parallel to the principal crystallographic axes. These structures are, however, less pronounced than in other silicides, such as and , and this suggests only a weak anisotropy of the Fermi surface. The galvanomagnetic properties behave consistently with band-structure calculations of Mattheiss and Hensel [Phys. Rev. B 39, 7754 (1989)] who found that is a compensated metal with only closed orbits for the Fermi electrons. Using a simple two-band model we estimated, from the low field magnetoresistance, carrier density ==(0.45–0.52)× assuming equal concentration of electrons and holes. Low temperatures (1.6<T<22 K) specific-heat () measurements fit a linear /T=γ+β dependence, with γ=3.35±0.05 mJ/ mol and β=0.0201±0.0005 mJ/ mol. From these parameters we estimated the Debye temperature =662±4 K and the renormalized electronic density of states at the Fermi surface N(
Keywords
This publication has 17 references indexed in Scilit:
- Simply irresistible silicidesPhysics World, 1995
- The heat capacity of titanium disilicideJournal of Applied Physics, 1994
- Dielectric properties of single-crystalfrom 0.6 to 20 eVPhysical Review B, 1991
- Electrical resistivities of single-crystalline transition-metal disilicidesJournal of Applied Physics, 1990
- Electrical resistivity and Hall effect of TiSi2 thin films in the temperature range of 2–300 KJournal of Applied Physics, 1989
- Electronic structure ofPhysical Review B, 1989
- Crystal growth, characterization and resistivity measurements of TiSi2 single crystalsJournal of the Less Common Metals, 1987
- Electrical transport and i n s i t u x-ray studies of the formation of TiSi2 thin films on SiApplied Physics Letters, 1987
- Electrical transport properties of transition-metal disilicide filmsJournal of Applied Physics, 1987
- The Hall Effect in Metals and AlloysPublished by Springer Nature ,1972